ADVANCED HIGH SPEED DEVICES

ADVANCED HIGH SPEED DEVICES

CONTENTS


FRONT MATTER Michael S. Shur and Paul Maki	i
SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION BARBAROS ASLAN, LESTER F. EASTMAN and QUENTIN DIDUCK	1
5-TERMINAL THz GaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES GRIGORY SIMIN, MICHAEL S. SHUR and REMIS GASKA	7
PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC NANOWIRE MOSFETs LINGQUAN (DENNIS) WANG, BO YU, PETER M. ASBECK, YUAN TAUR and MARK RODWELL	15
A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS QUENTIN DIDUCK, HIROSHI IRIE and MARTIN MARGALA	23
EMISSION AND INTENSITY MODULATION OF TERAHERTZ ELECTROMAGNETIC RADIATION UTILIZING 2-DIMENSIONAL PLASMONS IN DUAL-GRATING-GATE HEMT'S TAIICHI OTSUJI, TAKUYA NISHIMURA, YUKI TSUDA, YAHYA MOUBARAK MEZIANI, TETSUYA SUEMITSU and EIICHI SANO	33
MILLIMETER WAVE TO TERAHERTZ IN CMOS K. K. O, S. SANKARAN, C. CAO, E.-Y. SEOK, D. SHIM, C. MAO and R. HAN	55
THE EFFECTS OF INCREASING AlN MOLE FRACTION ON THE PERFORMANCE OF AlGaN ACTIVE REGIONS CONTAINING NANOMETER SCALE COMPOSITIONALLY INHOMOGENEITIES A. V. SAMPATH, M. L REED, C. MOE, G. A. GARRETT, E. D. READINGER, W. L SARNEY, H. SHEN, M. WRABACK, C. CHUA and N. M. JOHNSON	69
SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION VENKATA S. CHIVUKULA, DAUMANTAS CIPLYS, KAI LIU, MICHAEL S. SHUR and REMIS GASKA	77
SOLAR-BLIND SINGLE-PHOTON 4H-SiC AVALANCHE PHOTODIODES ALEXEY VERT, STANSILAV SOLOVIEV, JODY FRONHEISER and PETER SANDVIK	85
MONTE CARLO SIMULATIONS OF In_0.75Ga_0.25As MOSFETs AT 0.5 V SUPPLY VOLTAGE FOR HIGH-PERFORMANCE CMOS J. S. AYUBI-MOAK, K. KALNA and A. ASENOV	93
THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS H. KARIMY, L. GUNTER, D. DUGAS, P. C. CHAO, W. KONG, S. YANG, P. SEEKELL, K. H. G. DUH, J. LOMBARDI and L. MT PLEASANT	101
HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES DONG XU, WENDELL M. T. KONG, XIAOPING YANG, P. SEEKELL, L. MOHNKERN, H. KARIMY, K. H. G. DUH, P. M. SMITH and P. C. CHAO	107
MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE X. CHEN, K. D. MATTHEWS, D. HAO, W. J. SCHAFF, L. F. EASTMAN, W. WALUKIEWICZ, J. W. AGER and K. M. YU	113
PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN SURFACES KE TANG, WEIXIAO HUANG and T. PAUL CHOW	121
HIGH CURRENT DENSITY/HIGH VOLTAGE AlGaN/GaN HFETs ON SAPPHIRE JUNXIA SHI, M. POPHRISTIC and L. F. EASTMAN	129
InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE M. ALOMARI, F. MEDJDOUB, E. KOHN, M.-A. DI FORTE-POISSON, S. DELAGE, J.-F. CARLIN, N. GRANDJEAN and C. GAQUIÈRE	137
GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS TETSUZO UEDA, YASUHIRO UEMOTO, TSUYOSHI TANAKA and DAISUKE UEDA	145
4-NM AlN BARRIER ALL BINARY HFET WITH SiN_x GATE DIELECTRIC TOM ZIMMERMANN, YU CAO, DEBDEEP JENA, HUILI GRACE XING and PAUL SAUNIER	153
EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE HARSH NAIK, KE TANG and T. PAUL CHOW	161
CHARACTERIZATION AND MODELING OF INTEGRATED DIODE IN 1.2kV 4H-SiC VERTICAL POWER MOSFET HARSH NAIK, YI WANG and T. PAUL CHOW	167
PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs HEATHER O'BRIEN and M. GAIL KOEBKE	173
BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES D. P. URCIUOLI and VICTOR VELIADIS	183
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